DRAM Roadmap
1β uses advanced CMOS techniques and multipatterning.
EUV will be introduced with 1γ (Not 1y).
R&D into High-NA EUV & 3D DRAM.
1δ and 1ε nodes are in development and pathfinding respectively.
1β will be used for DDR5, LPDDR5 and HBM3.
DRAM EUV Introduction
Will be introduced in 2024, with 1γ.
More Advanced Tools
Greater Reliability, Productivity & Performance
Mature Enabling Technologies
Usage in conjunction with DUV multipatterning.
NAND Roadmap
Will continue to use advanced CMOS.
2YYL in yield ramping, 3XXL in development and 4XXL in pathfinding.
Dual-stack will be used for increasing layer counts.
QLC will be used to increase bit shipments per wafer.
Ok, I lied slightly, I did care about three other slides.
1,2: HBM and CXL growth
3: Average Smartphone NAND & DRAM Content
50% of smartphone DRAM and and 60% of smartphone DRAM for FY22 (Q2 2021 - Q1 2022) is quite a good ramp for their 1α and 176L nodes.